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APTGT50A120T1G
Phase leg Fast Trench + Field Stop IGBT(R) Power Module
5 Q1 7 8 Q2 9 10 1 2 12 CR2 3 4 NTC 6 11
VCES = 1200V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 125C Max ratings 1200 75 50 100 20 277 100A @ 1150V Unit V A V W
August, 2007 1-5 APTGT50A120T1G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT50A120T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 18 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 18 Min Typ 3600 160 90 30 420 70 90 50 520 90 5 mJ 5.5 Max Unit pF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 50A
50 1.6 1.6 170 280 5.6 9.9 2.2 4.1
2.1
V ns C mJ
August, 2007 2-5 APTGT50A120T1G - Rev 0
IF = 50A VR = 600V
di/dt =1900A/s
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APTGT50A120T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.45 0.72 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 - T25 T
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTGT50A120T1G - Rev 0
August, 2007
APTGT50A120T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 100
TJ = 125C
100
TJ=25C
80
TJ=125C
80 IC (A) 60 40 20 0
VGE=17V
VGE=13V VGE=15V VGE=9V
IC (A)
60 40 20 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
0
1
2 VCE (V)
3
4
100 80 60 40 20 0 5
Transfert Characteristics 12
TJ=25C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 18 TJ = 125C Eon
10
TJ=125C
8 E (mJ) 6 4
IC (A)
Eon Eoff Er
TJ=125C
2 0
6
7
8
9
10
11
12
0
20
40 IC (A)
60
80
100
VGE (V) Switching Energy Losses vs Gate Resistance 12 10 8 E (mJ) 6 4 2 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80
Er VCE = 600V VGE =15V IC = 50A TJ = 125C
Reverse Bias Safe Operating Area 120
Eon
100 80 IC (A)
Eoff
60 40 20 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=18
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 0.0001 0.001 0.9 0.7
IGBT
Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
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4-5
APTGT50A120T1G - Rev 0
August, 2007
APTGT50A120T1G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 70 60 50 40 30 20 10 0 10
hard switching ZVS ZCS VCE=600V D=50% RG=18 TJ=125C TC=75C
Forward Characteristic of diode 100 80 60 40 20 0
TJ=125C TJ=25C TJ=125C
IF (A)
20
30
40 50 IC (A)
60
70
80
0
0.5
1
1.5 VF (V)
2
2.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (C/W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT50A120T1G - Rev 0
August, 2007

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